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譯文摘錄(鑒于保密要求，敏感內(nèi)容以“X”代替)：

        按照《半導(dǎo)體集成電路XXX型片上系統(tǒng)單粒子效應(yīng)試驗(yàn)方案》，對(duì)XXX生產(chǎn)半導(dǎo)體集成電路XXX型片上系統(tǒng)進(jìn)行單粒子效應(yīng)試驗(yàn)。依據(jù)試驗(yàn)數(shù)據(jù)結(jié)果，得出結(jié)論如下：

SEE test is carried out to semiconductor integrated circuit XXX system on chip manufactured by XXX according to “SEE test plan for semiconductor integrated circuit XXX system on chip”. The following conclusions are drawn based on the test data:

1. XXX型片上系統(tǒng)的單粒子翻轉(zhuǎn)飽和截面為6.99×10-4cm2/器件，單粒子翻轉(zhuǎn)LET閾值為26.3MeV.cm2/mg，滿足詳細(xì)規(guī)范中的抗單粒子翻轉(zhuǎn)指標(biāo)LET ≥15MeV.cm2/mg；
1. For XXX system on chip, the saturated cross section of single event upset (SEU) is 6.99×10-4cm2/device and the SEU LET threshold is 26.3MeV.cm2/mg, conforming to the SEU-tolerant indicator specified in the detailed specification: LET ≥ 15MeV.cm2/mg;

2. XXX型片上系統(tǒng)的單粒子功能中斷飽和截面為6×10-7cm2/器件，單粒子功能中斷LET閾值為42.01MeV.cm2/mg（10%飽和截面）。利用Space Radiation5.0計(jì)算XXX型片上系統(tǒng)GEO軌道的單粒子功能中斷率為3.61×10-8次/器件.天（太陽(yáng)活動(dòng)最小，Adams 90%最壞情況，3mm等效Al屏蔽），滿足詳細(xì)規(guī)范中的GEO軌道單粒子功能錯(cuò)誤指標(biāo)優(yōu)于8×10-5次/天.器件；
2. For XXX system on chip, the saturated cross section of single event functional interrupt (SEFI) is 6×10-7cm2/device and the SEFI LET threshold is 42.01MeV.cm2/mg (10% saturated cross section). The SEFI rate of XXX system on chip on the GEO orbit is calculated by Space Radiation 5.0 to be 3.61×10-8 times/device•day (solar minimum, Adams 90% worst case, 3mm equivalent Al shielding), conforming to the SEFI rate indicator specified in the detail specification: SEFI rate on the GEO orbit is better than 8×10-5 times/day•device;

3. XXX型片上系統(tǒng)的單粒子鎖定LET閾值高于99.8MeV.cm2/mg，滿足詳細(xì)規(guī)范中的抗單粒子鎖定指標(biāo)LET ≥75MeV.cm2/mg。
3. Single event latch-up (SEL) LET threshold of XXX system on chip is higher than 99.8MeV.cm2/mg, conforming to the SEL indicator specified in the detail specification: LET ≥ 75MeV.cm2/mg.