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5.2單粒子效應(yīng)檢測內(nèi)容

5.2 Test items of the single event effect

該器件單粒子燒毀和單粒子?xùn)糯┬?yīng)的檢測包括V_GS在XXX條件下的安全工作區(qū)。

Detection on the single event burnout and gate rupture effect of the device includes testing the area of safe operation of VGS under the conditions of XXX.

1）單粒子安全工作區(qū)試驗(yàn)方法如下：

1)  The method for testing the area of safe single event operation is as follows:

試驗(yàn)離子注量率為XXX/cm²/s±XXX%，總注量為XXX/cm²。

The ion fluence rate in the test is XXX/cm²/s±XXX%, and the total fluence is XXX/cm².

由于在絕對值較大的負(fù)柵壓條件下，某一漏壓能夠通過單粒子試驗(yàn)，則在絕對值小的負(fù)柵壓下，必然能通過此漏壓下的單粒子試驗(yàn)。因此，建議輻照器件初設(shè)偏置條件：V_GS=XXX、V_DS=XXXBV_DSS；（或依據(jù)器件實(shí)際情況設(shè)置），偏置矩陣如圖2所示，沿箭頭方向，先向上后向右。

As the device can pass the single event test at a certain drain voltage wherein the minus gate voltage has a larger absolute value, it will definitely pass such test under a minus gate voltage with a smaller absolute value. Therefore, it is advised to set the bias conditions at the early stage of irradiating the device: V_GS=XXX, V_DS=XXXBV_DSS; (or set as per the conditions of the device). The bias matrix is shown in Fig. 2, which goes up and turns right along the direction of the arrow.

若初始偏置下不發(fā)生SEB/SEGR，則在V_GS=-XXX條件下，對漏源電壓按照XXXV_DS的增量進(jìn)行遞增施加，到V_DS達(dá)到最大擊穿電壓或發(fā)生單粒子燒毀或單粒子?xùn)糯橹?，每個V_DS偏置下均完成一次輻照流程；若初始偏置下發(fā)生SEB/SEGR，則對漏源電壓按照10%V_DS的增量進(jìn)行遞減施加，直到不發(fā)生SEB/SEGR為止，每個V_DS偏置下均完成一次輻照流程。

If no SEB/SEGR occurs under initial bias, then under the condition of V_GS=XXX, the drain-source voltage is increased gradually with an increment of XXXV_DS, until the V_DSreaches the maximum breakdown voltage, or single event burnout or gate rupture occurs, and an irradiation process is completed under each V_DS bias; if SEB/SEGR occurs under initial bias, then drain-source voltage is decreased gradually with a decrement of XXXV_DS, until SEB/SEGR does not occur, and an irradiation process is completed under each V_DS bias.