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譯文摘錄（保密內(nèi)容以XXX替代）：
 
引言
Introduction
 
衛(wèi)星、飛船運(yùn)行于軌道空間， 不可避免地遭遇各種帶電粒子的輻射， 空間帶電粒子通過與星上電子元器件相互作用產(chǎn)生輻射效應(yīng)， 對(duì)衛(wèi)星造成不同程度的損傷， 威脅衛(wèi)星安全運(yùn)行。
Satellites and spacecraft operating in the orbit of space will inevitably suffer from radiation emitted by various kinds of charged particles. Afterwards, these parties in space and electronic components in the satellites will interact with each other to produce the radiation effect, which will cause damage to the satellites to varying degrees and threaten their safe operation.
 
微電子器件受空間輻射引起的單粒子翻轉(zhuǎn)（SEU）、單粒子鎖定（SEL）或單粒子燒毀（SEB）等統(tǒng)稱為單粒子效應(yīng)，它是威脅衛(wèi)星及各種航天器在軌正常運(yùn)行和壽命的重要因素之一。
Single Event Upset (SEU), Single Event Latchup (SEL) or Single Event Burnout (SEB), arising from the microelectronic devices being exposed to space radiation, are collectively referred to as the single event effect (SEE). SEE is among the crucial factors threatening the in-orbit normal operation and service life of satellites and different types of spacecraft.
 
元器件在用于衛(wèi)星型號(hào)之前，必須在地面用高能質(zhì)子或重離子加速器產(chǎn)生的高能質(zhì)子或重離子模擬空間輻射環(huán)境，測(cè)量其抗單粒子翻轉(zhuǎn)、單粒子鎖定、 單粒子燒毀能力和出現(xiàn)這些效應(yīng)的截面，以判斷其是否達(dá)到了所需的抗輻射性能指標(biāo)。器件單粒子效應(yīng)評(píng)估結(jié)果與單粒子效應(yīng)測(cè)試方法有關(guān)。本文建立了一種SRAM單粒子效應(yīng)測(cè)試方法，可較好的區(qū)分SRAM內(nèi)部各功能單元的單粒子效應(yīng)敏感性。
Before applying a component to one type of satellite, high-energy protons or heavy ions generated from high-energy proton or heavy ion accelerators must be used on the ground to simulate the space radiation environment. The aim is to measure its ability to resist SEU, SEL and SEB, and the sections where these effects occur, in a move to judge whether the component has reached the required anti-radiation performance indicator. The result of evaluating the single event effect in a component is related with the SEE testing method. Given that, this paper creates a SRAM-based SEE testing method which will prove effective in differentiating between the internal functions units of SRAM in their sensitivity to SEE.